Symmetric rate model for fluorocarbon plasma etching of SiO2

被引：40

作者：

Ding, J ^{[1
]}

Hershkowitz, N ^{[1
]}

机构：

[1] UNIV WISCONSIN,ENGN RES CTR PLASMA AIDED MFG,MADISON,WI 53706

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A symmetric rate model for plasma etching and plasma deposition in fluorocarbon plasmas is proposed. When there is no deposition, the symmetric rate model gives a plasma etch rate. When there is no etching, the model gives a plasma deposition rate. Electron cyclotron resonance and reactive ion etcher etch rates of SiO2 in CF4 plasma are found to be consistent with the model. (C) 1996 American Institute of Physics.

引用

页码：1619 / 1621

页数：3

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