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- [1] Enhanced energy-storage performance in AgNbO3-based lead-free antiferroelectrics via relaxor ferroelectric subsitutionSOLID STATE COMMUNICATIONS, 2025, 397Zhang, N.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaJia, P. P.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhu, M. M.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaKong, L. Y.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaLi, J.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaGuo, Q. Y.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhang, Y. H.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaLiu, Z. Y.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaLi, T.论文数: 0 引用数: 0 h-index: 0机构: Zhengzhou Univ Light Ind, Sch Elect & Informat, Henan Key Lab Magnetoelectron Informat Funct Mat, Zhengzhou 450002, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaGuo, Y. Y.论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhou, S.论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaSong, G. L.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China
- [2] High energy storage density in AgNbO3-based lead-free antiferroelectrics using A/B-site co-doping strategyAPPLIED PHYSICS LETTERS, 2024, 124 (17)Zhang, N.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaJiang, J. R.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhang, J. X.论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaWang, J. Y.论文数: 0 引用数: 0 h-index: 0机构: Donghua Univ, Coll Mat Sci & Engn, Shanghai 201620, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaJia, P. P.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhu, M. M.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaGuo, Y. Y.论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaZhou, S.论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R ChinaSong, G. L.论文数: 0 引用数: 0 h-index: 0机构: Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China Henan Normal Univ, Coll Phys, Henan Key Lab Adv Semicond & Funct Device Integrat, Xinxiang 453007, Peoples R China
- [3] Enhanced breakdown strength via a codoping strategy and tape-casting technique: An approach for excellent energy storage performance in lead-free AgNbO3-based antiferroelectricsJOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2025, 45 (07)Yang, Bingqing论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaXu, Wei论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaZhang, Yu论文数: 0 引用数: 0 h-index: 0机构: Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaXu, Zedong论文数: 0 引用数: 0 h-index: 0机构: Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaWu, Shizhe论文数: 0 引用数: 0 h-index: 0机构: Tiangong Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaWu, Xiao论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaZhao, Chunlin论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaLin, Tengfei论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaGao, Min论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R ChinaLin, Cong论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
- [4] Designing lead-free antiferroelectrics for energy storageNature Communications, 8Bin Xu论文数: 0 引用数: 0 h-index: 0机构: University of Arkansas,Physics Department and Institute for Nanoscience and EngineeringJorge Íñiguez论文数: 0 引用数: 0 h-index: 0机构: University of Arkansas,Physics Department and Institute for Nanoscience and EngineeringL. Bellaiche论文数: 0 引用数: 0 h-index: 0机构: University of Arkansas,Physics Department and Institute for Nanoscience and Engineering
- [5] Designing lead-free antiferroelectrics for energy storageNATURE COMMUNICATIONS, 2017, 8Xu, Bin论文数: 0 引用数: 0 h-index: 0机构: Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USAIniguez, Jorge论文数: 0 引用数: 0 h-index: 0机构: Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USABellaiche, L.论文数: 0 引用数: 0 h-index: 0机构: Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA
- [6] Crystal structure and electrical properties of AgNbO3-based lead-free ceramicsCERAMICS INTERNATIONAL, 2016, 42 (16) : 18791 - 18797Xu, Yonghao论文数: 0 引用数: 0 h-index: 0机构: Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R ChinaWang, Guodong论文数: 0 引用数: 0 h-index: 0机构: Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R ChinaTian, Ye论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R ChinaYan, Yangxi论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R ChinaLiu, Xiaolian论文数: 0 引用数: 0 h-index: 0机构: Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R ChinaFeng, Yujun论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454003, Peoples R China
- [7] Enhanced energy storage density of antiferroelectric AgNbO3-based ceramics by Bi/Ta modification at A/B sitesJournal of Materials Science: Materials in Electronics, 2022, 33 : 3081 - 3090Dapeng Yang论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringYuchen Lan论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringChanglai Yuan论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringHuihuang Lai论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringJunlin Wu论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringQin Feng论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringBaohua Zhu论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringLiufang Meng论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringChangrong Zhou论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringJiwen Xu论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringJiang Wang论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and EngineeringGuanghui Rao论文数: 0 引用数: 0 h-index: 0机构: Guilin University of Electronic Technology,College of Material Science and Engineering
- [8] Enhanced energy storage density of antiferroelectric AgNbO3-based ceramics by Bi/Ta modification at A/B sitesJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (06) : 3081 - 3090Yang, Dapeng论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaLan, Yuchen论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaYuan, Changlai论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaLai, Huihuang论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaWu, Junlin论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Resources Environm & Mat, Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China Guangxi Univ, Sch Resources Environm & Mat, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaFeng, Qin论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Resources Environm & Mat, Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China Guangxi Univ, Sch Resources Environm & Mat, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Nanning 530004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaZhu, Baohua论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaMeng, Liufang论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaZhou, Changrong论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaXu, Jiwen论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaWang, Jiang论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R ChinaRao, Guanghui论文数: 0 引用数: 0 h-index: 0机构: Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Guilin Univ Elect Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China
- [9] Constructing local structure heterogeneity in AgNbO3-based antiferroelectrics: Achieving excellent anti-fatigue and energy storage propertiesChemical Engineering Journal, 1600, 502Gao, Shuaibing论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, China School of Advanced Materials and Nanotechnology, Xidian University, Xi'an,710126, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaXu, Zhihang论文数: 0 引用数: 0 h-index: 0机构: Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaZeng, Haolin论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaShen, Meng论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan,430062, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaZhu, Ye论文数: 0 引用数: 0 h-index: 0机构: Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaHuang, Haitao论文数: 0 引用数: 0 h-index: 0机构: Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaHu, Yongming论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan,430062, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaHe, Yunbin论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, ChinaZhang, Qingfeng论文数: 0 引用数: 0 h-index: 0机构: Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Materials Science & Engineering, Hubei University, Wuhan,430062, China
- [10] Antiferroelectric-ferroelectric crossover induced by composition variation in AgNbO3-based lead-free ceramicsJournal of Materials Science: Materials in Electronics, 2023, 34Tingfang Tian论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and EngineeringFeilong Chen论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and EngineeringZhaokuan Wen论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and EngineeringZhiguo Wang论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and EngineeringYongming Hu论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and EngineeringShengwen Shu论文数: 0 引用数: 0 h-index: 0机构: Nanchang University,School of Materials Science and Engineering