Study on tile field profiles of rib waveguides fabricated on GaAs-AlxGa1-xAs material

被引：0

作者：

Mahmood, ZH ^{[1
]}

Sujecki, S ^{[1
]}

机构：

[1] Univ Dhaka, Dept Appl Phys & Elect, Dhaka 1000, Bangladesh

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rib waveguides were fabricated on GaAs-AlxGa1-xAs wafer using standard photolithography and reactive ion etching. Evidence of lateral confinement on these waveguides was observed experimentally and compared with theoretical Semi-Vectorial Finite Difference simulation to find a minimum of 10% difference. This minimum difference was obtained for a fabricated rib waveguide of 6mum width and 0.01mum height.

引用

页码：223 / 226

页数：4

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