Resonant Raman scattering in self-assembled GaN/AlN quantum dots

被引：23

作者：

Garro, N. ^{[1
]}

Cros, A.

Llorens, J. M.

Garcia-Cristobal, A.

Cantarero, A.

Gogneau, N.

Sarigiannidou, E.

Monroy, E.

Daudin, B.

机构：

[1] Univ Politecn Valencia, Inst Ciencia Mat, E-46071 Valencia, Spain

[2] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, CES CNRS Grp Nanophys & Semicond, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.74.075305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-assembled GaN/AlN quantum dots have been investigated by means of Raman scattering. A resonant enhancement of the Raman peaks has been observed when the excitation is tuned above the GaN band-gap energy. The polar mode nature, either quasiconfined or interfacial, has been assigned after comparing with the polar optical modes of spheroidal dots calculated within the framework of the anisotropic dielectric continuum model. The built-in strain of the GaN dots induced a substantial blueshift of the nonpolar E-2H Raman mode frequency. A theoretical model that analyzes the three-dimensional strain distribution in the quantum dots has been employed for estimating the strain contribution to the frequency shifts of both nonpolar and polar optical modes.

引用

页数：8

共 33 条

[1]

ANASTASSAKIS A, 1998, HIGH PRESSURE SEMICO, V2

[2] Theory of the electronic structure of GaN/AIN hexagonal quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

PHYSICAL REVIEW B, 2000, 62 (23) :15851-15870

[3] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[4]

Cardona M., 1982, LIGHT SCATTERING SOL

[5] On the driving forces for the vertical alignment in nitride quantum dot multilayers [J].

Chamard, V ;

Metzger, TH ;

Sztucki, M ;

Holy, V ;

Tolan, M ;

Bellet-Amalric, E ;

Adelmann, C ;

Daudin, B ;

Mariette, H .

EUROPHYSICS LETTERS, 2003, 63 (02) :268-274

[6] Raman study and theoretical calculations of strain in GaN quantum dot multilayers [J].

Cros, A ;

Garro, N ;

Llorens, JM ;

García-Cristóbal, A ;

Cantarero, A ;

Gogneau, N ;

Monroy, E ;

Daudin, B .

PHYSICAL REVIEW B, 2006, 73 (11)

[7] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].

Daudin, B ;

Widmann, F ;

Feuillet, G ;

Samson, Y ;

Arlery, M ;

Rouviere, JL .

PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072

[8] Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC [J].

Davydov, VY ;

Averkiev, NS ;

Goncharuk, IN ;

Nelson, DK ;

Nikitina, IP ;

Polkovnikov, AS ;

Smirnov, AN ;

Jacobsen, MA ;

Semchinova, OK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5097-5102

[9] Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].

Davydov, VY ;

Kitaev, YE ;

Goncharuk, IN ;

Smirnov, AN ;

Graul, J ;

Semchinova, O ;

Uffmann, D ;

Smirnov, MB ;

Mirgorodsky, AP ;

Evarestov, RA .

PHYSICAL REVIEW B, 1998, 58 (19) :12899-12907

[10] Intrinsic exciton-exciton coupling, in GaN-based quantum dots: Application to solid-state quantum computing [J].

De Rinaldis, S ;

D'Amico, I ;

Biolatti, E ;

Rinaldi, R ;

Cingolani, R ;

Rossi, F .

PHYSICAL REVIEW B, 2002, 65 (08) :1-4

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