Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers

被引:45
作者
Yi, Sheng-Han [1 ]
Lin, Bo-Ting [1 ]
Hsu, Tzu-Yao [1 ]
Shieh, Jay [1 ]
Chen, Miin-Jang [1 ]
机构
[1] Natl Taiwan Univ, Dept Mat Sci & Engn, 1 Roosevelt Rd,Sec 4, Taipei 106, Taiwan
关键词
ZrO2; Ferroelectricity; Antiferroelectricity; Interfacial layers; NEGATIVE CAPACITANCE; CRYSTAL-STRUCTURE; MEMORY; DEPOSITION; ZIRCONIA; CERAMICS;
D O I
10.1016/j.jeurceramsoc.2019.05.065
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, tailoring the microstructures and ferroelectric(FE)/antiferroelectric(AFE) properties of nanoscale ZrO2 thin films is demonstrated with an intentional introduction of sub-nanometre interfacial layers. The ferroelectricity of ZrO2 thin films is significantly enhanced by the HfO2 interfacial layers, while the TiO2 interfacial layers lead to a dramatic transformation of ZrO2 from ferroelectricity into antiferroelectricity. The HfO2 and TiO2 interfacial layers boost the formation of the polar orthorhombic phase with (111)-texture and the non-polar tetragonal phase with (110)-texture in the FE/AFE ZrO2 thin films, respectively, as evidenced by grazing incidence, out-of-plane, and in-plane X-ray diffraction measurements. Furthermore, the modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films by the HfO2/TiO2 interfacial layers can be achieved without high-temperature annealing, which is highly advantageous to process integration. The findings demonstrate the important role of the interfaces in the effective tuning of FE/AFE properties of nanoscale thin films.
引用
收藏
页码:4038 / 4045
页数:8
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