Deposition of Ir Nanostructured Thin Films by Pulse CVD

被引:4
作者
Gelfond, Nikolay V. [1 ]
Semyannikov, Pyotr P. [1 ]
Trubin, Sergei V. [1 ]
Morozova, Natalia B. [1 ]
Igumenov, Igor K. [1 ]
机构
[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia
来源
EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期
关键词
D O I
10.1149/1.3207679
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nanostructured thin iridium films were deposited by pulse CVD. Tris(acetylacetonato)iridium(III) was used as the precursor. The thermochemical properties of this precursor were determined by mass spectrometric monitoring its vapour phase interaction with heated surfaces both in vacuum and in atmospheres of H-2 and O-2. The results obtained provided a guide for understanding which pulse CVD process conditions to use for growing thin films of iridium using hydrogen or oxygen as gas reactant. Deposited iridium film thicknesses were varied from 5 to 25 nm. Iridium films were characterized by means of SEM, AFM, HRTEM and XPS.
引用
收藏
页码:871 / 874
页数:4
相关论文
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