SOI dual-gate ISFET with variable oxide capacitance and channel thickness

被引：47
作者：
Park, Jin-Kwon [1 ]
Jang, Hyun-June [1 ]
Park, Jong-Tae [2 ]
Cho, Won-Ju [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul, South Korea
[2] Incheon Univ, Dept Elect Engn, Inchon, South Korea
来源：
SOLID-STATE ELECTRONICS | 2014年 / 97卷
基金：
新加坡国家研究基金会;
关键词：
SOI; ISFET; Dual-gate; Oxide capacitance; PH-ISFET; SENSING MEMBRANE; MOSFETS; SENSITIVITY; CHARGE;
D O I：
10.1016/j.sse.2014.04.036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-gate (DG) ion sensitive field effect transistor (ISFET) using capacitance coupling effect has recently been proposed to overcome the Nernst limitation as 59 mV/pH. In this study, we focus on the analysis of sensing characteristics by various oxide capacitances and channel thickness using intensive measurement on conventional fully depleted (FD) silicon-on-insulator (SOI) based DG ISFET. The enlarged oxide capacitance and reductive channel thickness enhance the capacitive coupling effect and increase sensitivity of DG ISFET. And also, the thin channel thickness reduced the leakage current in the DG operation. These will be very promising techniques for high performance biosensor application. (C) 2014 Elsevier Ltd. All rights reserved.
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收藏
页码：2 / 7
页数：6
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