Coulomb scattering model for ultrathin silicon-on-insulator inversion layers

被引：20

作者：

Gamiz, F ^{[1
]}

Jiménez-Molinos, F ^{[1
]}

Roldán, JB ^{[1
]}

Cartujo-Cassinello, P ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Computadores, E-18071 Granada, Spain

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1477623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Coulomb scattering model for ultrathin silicon-on-insulator inversion layers has been developed. This model simultaneously takes into account (i) screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution, (iv) the charged center correlation, and (v) the effect of image charges. We have used this model in a Monte Carlo simulator for single-gate silicon-on-insulator inversion layers and have calculated electron mobility curves in these devices taking into account phonon, surface roughness and Coulomb scattering for different values of the silicon slab thickness sandwiched between the two oxide layers. (C) 2002 American Institute of Physics.

引用

页码：3835 / 3837

页数：3

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