Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

This paper aims at presenting a detailed and comprehensive study of the influence of space-charge condition at the substrate/BOX interface. as a function of the gate length and substrate bias. oil both the front threshold voltage (V-thr,) and subthreshold slope (S), for sub-32 nm Ultra-Thin Body (UTB) SOI MOSFETs with two different BOX thicknesses: either standard 145 mn (UTB) or thin 11.5 nm (UTB2). This Study details for the first time, the important impact of the substrate/BOX interface regime variations with gate length from 1 mu m clown to 25 nm, substrate bias and BOX thickness together, on the mean channel position into film and its related impact oil the electrical parameters V-thr and S Experimental results and conclusions are also completed and enlightened by ATLAS simulations and analytical modeling. (C) 2009 Elsevier Ltd. All rights reserved