Fabrication and Characterization of Porous Silicon Nanowires

被引：15
作者：
Jung, Daeyoon [1 ]
Cho, Soo Gyeong [2 ]
Moon, Taeho [3 ]
Sohn, Honglae [1 ]
机构：
[1] Chosun Univ, Dept Chem, Gwangju 501759, South Korea
[2] Agcy Def Dev, Inst Def Adv Technol Res, Daejeon 305600, South Korea
[3] Dankook Univ, Dept Mat Sci & Engn, Cheonan 330714, Chungnam, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2016年 / 12卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
porous silicon nanowire; silicon nanowire; porous silicon; etch rate; SMART PARTICLES; LOGIC GATES; SI; PERFORMANCE; GROWTH; SURFACE; ARRAYS; AGENTS;
D O I：
10.1007/s13391-015-5409-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the synthesis of porous silicon nanowires through the metal-assisted chemical etching of porous silicon in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of porous silicon nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The etch rate of the porous silicon nanowires was faster than that of silicon nanowires, but slower than that of porous silicon. The porous silicon nanowires distributed uniformly on the entire porous silicon layer and the tips of the porous silicon nanowires congregated together. The single crystalline and sponge-like porous structure with the pore diameters of less than 5 rim was confirmed for the porous silicon nanowires.
引用
收藏
页码：17 / 23
页数：7
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