Analysis of a hybrid model for the electro-thermal behavior of semiconductor heterostructures

被引：3

作者：

Glitzky, Annegret ^{[1
]}

Liero, Matthias ^{[1
]}

Nika, Grigor ^{[1
]}

机构：

[1] Weierstrass Inst Appl Anal & Stochast, Mohrenstr 39, D-10117 Berlin, Germany

来源：

JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS | 2022年 / 507卷 / 02期

关键词：

Drift-diffusion; Charge & heat transport; Electro-thermal interaction; Semiconductor heterostructures; Hybrid modeling; Weak solutions; ENERGY MODELS; SYSTEMS;

D O I：

10.1016/j.jmaa.2021.125815

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We prove existence of a weak solution for a hybrid model for the electro-thermal behavior of semiconductor heterostructures. This hybrid model combines an electrothermal model based on drift-diffusion with thermistor type models in different subregions of the semiconductor heterostructure. The proof uses a regularization method and Schauder's fixed point theorem. For boundary data compatible with thermodynamic equilibrium we verify, additionally, uniqueness. Moreover, we derive bounds and higher integrability properties for the electrostatic potential and the quasi Fermi potentials as well as the temperature. (C) 2021 Elsevier Inc. All rights reserved.

引用

页数：26

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