Microhardness-plasmon energy-bulk modulus relationship in ternary chalcopyrite semiconductors

被引：10

作者：

Kumar, V ^{[1
]}

Prasad, GM ^{[1
]}

Chandra, D ^{[1
]}

机构：

[1] CENT MIN RES INST,DHANBAD 826001,BIHAR,INDIA

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1996年 / 31卷 / 04期

关键词：

D O I：

10.1002/crat.2170310415

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper simple relations have been proposed for the calculation of microhardness and bulk modulus of I-III-VI2 and II-IV-V-2 chalcopyrite semiconductors. The present calculations do not require any experimental data except the plasmon energy of the semiconductors. A linear relation between bulk modulus and microhardness has also been obtained. Our calculated values are in fair agreement with the experimental values and the values reported by different workers.

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页码：501 / 504

页数：4

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