Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

被引：148

作者：

Toko, Kaoru ^{[1
]}

Nakao, Isakane ^{[1
]}

Sadoh, Taizoh ^{[1
]}

Noguchi, Takashi ^{[2
]}

Miyao, Masanobu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[2] Univ Ryukyus, Dept Elect & Elect Engn, Okinawa 9030213, Japan

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 11期

关键词：

Poly-Ge; Electrical characteristics; Solid-phase crystallization; Thin-film transistor; INDUCED LATERAL CRYSTALLIZATION; HOLE MOBILITY; AMORPHOUS SIGE; METAL; CHANNEL; FILMS; HETEROSTRUCTURE; ENHANCEMENT; NUCLEATION; MOSFETS;

D O I：

10.1016/j.sse.2009.08.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 degrees C) to obtain large grains and subsequent high-temperature annealing (500 degrees C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 x 10(18) to 5 x 10(17) cm(-3) with keeping a high-mobility (140 cm(2)/Vs) after post-annealing. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1159 / 1164

页数：6

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