High Temperature Applications of Al Wire Connection to SiC Structures

被引：0

作者：

Kisiel, Ryszard ^{[1
]}

Guziewicz, Marek ^{[2
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75 St, PL-00662 Warsaw, Poland

[2] Inst Elect Technol, PL-02668 Warsaw, Poland

来源：

2008 31ST INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY: RELIABILITY AND LIFE-TIME PREDICTION | 2008年

关键词：

D O I：

10.1109/ISSE.2008.5276581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unique properties of SiC lead this semiconductor for applications in new electronic devices operating at high temperatures, high power and high frequencies. There are a few problems related to the production of high temperature SiC devices. Developing of reliable ohmic contacts to SiC structure as well as a wire connection between the SiC ohmic contact and package leads are the serious tasks for today. An investigation of properties of high temperature Al wire bonds between SiC and package leads was the aim of this work. Preliminary results of contacts resistance as well as the wire loop pull test show that Al-Al interconnection system can be use successfully up to 350 degrees C

引用

页码：264 / +

页数：2

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