Effect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors

被引：4

作者：

Chang, Chih-Pang ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 02期

关键词：

crystallisation; elemental semiconductors; passivation; semiconductor device reliability; semiconductor thin films; silicon; sputter etching; thin film transistors; THIN-FILM TRANSISTORS; POLY-SI TFTS; POLYCRYSTALLINE-SILICON; AMORPHOUS-SILICON; LEAKAGE CURRENT; ELECTRICAL CHARACTERISTICS; MEDIATED CRYSTALLIZATION; FLUORINE PASSIVATION; HIGH-PERFORMANCE; TEMPERATURE;

D O I：

10.1149/1.3265989

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, a CF4 plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.

引用

页码：H192 / H195

页数：4

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