Monte Carlo simulations of homogeneous upconversion in erbium-doped silica glasses

被引：39

作者：

Philipsen, JL

Bjarklev, A

机构：

[1] Ctr. for Broadband Telecom., Dept. of Electromagnetic Systems, Technical University of Denmark

[2] Electromagnetics Institute, Technical University of Denmark, Lyngby

[3] Ctr. for Broadband Telecom., Dept. of Electromagnetic Systems, Technical University of Denmark

[4] Technical University of Denmark, Lyngby

[5] Dept. of Electromagnetic Systems, Technical University of Denmark

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 05期

关键词：

concentration quenching; high-concentration erbium-doped amplifiers; upconversion;

D O I：

10.1109/3.572160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quenching of Er3+ ions by homogeneous energy-transfer upconversion in high-concentration erbium-doped silica glasses has been theoretically investigated, The results indicate that at Er3+ concentrations of 1.0-2.0.10(26) m(-3) or below, the kinetic limit of strong migration is not reached, and hence the widely accepted quadratic upconversion model is not generally valid, Nevertheless, the results offer an explanation of the experimental observations of quadratic upconversion. Furthermore, it has been shown that at a given population inversion, the quenching rate depends on the rate of exchange of the excited Er3+ ions by emission and absorption.

引用

页码：845 / 854

页数：10

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