Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

被引：35
|
作者：
Lozano, J. G. [1 ]
Morales, F. M.
Garcia, R.
Gonzalez, D.
Lebedev, V.
Wang, Ch. Y.
Cimalla, V.
Ambacher, O.
机构：
[1] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat & Ingn Met & Quim Inorgan, Puerto Real 11510, Cadiz, Spain
[2] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98684 Ilmenau, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 09期
关键词：
D O I：
10.1063/1.2696282
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cubic InN layers were grown by molecular beam epitaxy on buffer layers of indium oxide prepared onto sapphire (0001) substrates. The structure was analyzed by means of electron diffraction and transmission electron microscopy. The intermediate indium oxide layer presents a body centered cubic (bcc) structure, with bcc-In2O3(001)parallel to Al2O3(0001) plane relationship. Thereupon, a zinc-blende phase of InN (001) was grown with a reticular misfit of 1.6% and a significant reduction of mismatch-related defects. This good coherence offers a promising expectation to obtain high quality cubic InN layers superior to other highly mismatched cubic substrates used previously.(c) 2007 American Institute of Physics.
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页数：3
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