Two-dimensional imaging of III-V quantum dots confinement potential

被引：12

作者：

Shusterman, S. ^{[1
]}

Raizman, A. ^{[1
]}

Sher, A. ^{[1
]}

Schwarzman, A. ^{[2
]}

Azriel, O. ^{[2
]}

Boag, A. ^{[2
]}

Rosenwaks, Y. ^{[2
]}

Galindo, P. L. ^{[3
]}

Paltiel, Y. ^{[4
,5
]}

机构：

[1] Soreq NRC, Electroopt Div, IL-81800 Yavne, Israel

[2] Tel Aviv Univ, Fac Engn, Sch Elect Engn Phys Elect, IL-69978 Tel Aviv, Israel

[3] Univ Cadiz, CASEM, Dept Lenguajes & Sistemas Informat, Puerto Real 11510, Cadiz, Spain

[4] Hebrew Univ Jerusalem, Dept Appl Phys, IL-91904 Jerusalem, Israel

[5] Hebrew Univ Jerusalem, Ctr Nano Sci & Nanotechnol, IL-91904 Jerusalem, Israel

来源：

EPL | 2009年 / 88卷 / 06期

关键词：

SELF-ORGANIZED GROWTH; GE;

D O I：

10.1209/0295-5075/88/66003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Composition, doping, size, and strain distribution within quantum dots, and at the dots-substrate interfaces, determine the confinement potential of electrons and holes creating a complex band structure. We use ultra-high vacuum Kelvin probe force microscopy to obtain the two-dimensional confinement potential in and around InAs and InSb dots epitaxially grown on GaAs. It is found that the potential manifests rich features governed by the strain and composition variations in the vicinity of the individual quantum dots. The results can adjust or confirm theoretical predictions for many epitaxial dots systems. Copyright (C) EPLA, 2009

引用

页数：6

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