Growth of Semipolar (11(2)over-bar2) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate

被引：95

作者：

Okada, Narihito ^{[1
]}

Kurisu, Akihiro ^{[1
]}

Murakami, Kazuma ^{[1
]}

Tadatomo, Kazuyuki ^{[1
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Yamaguchi 7558611, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 09期

基金：

日本学术振兴会;

关键词：

SELECTIVE MOVPE; FILMS;

D O I：

10.1143/APEX.2.091001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semipolar (11 (2) over bar2) GaN was achieved by controlling anisotropic growth rates in a maskless r-plane patterned sapphire substrate. Upon optimizing the growth conditions, the growth rate of the GaN layer on etched c-plane-like sapphire was much higher than that on other planes such as the original r-plane sapphire. Singularly (11 (2) over bar2)-oriented GaN was confirmed when GaN was grown on only the c-plane-like sapphire sidewall. The control of the anisotropic growth rate is useful for growing nonpolar and semipolar layers using maskless patterned substrates. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 19 条

[1] M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy [J].

Armitage, R. ;

Hirayama, H. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[2] Characterization of planar semipolar gallium nitride films on sapphire substrates [J].

Baker, TJ ;

Haskell, BA ;

Wu, F ;

Speck, JS ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7) :L154-L157

[3] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[4]

Hiramatsu K, 1999, PHYS STATUS SOLIDI A, V176, P535, DOI 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO

[5]

2-I

[6] MOVPE GROWTH OF GAN ON A MISORIENTED SAPPHIRE SUBSTRATE [J].

HIRAMATSU, K ;

AMANO, H ;

AKASAKI, I ;

KATO, H ;

KOIDE, N ;

MANABE, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :509-512

[7] Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE [J].

Honda, Y ;

Kameshiro, N ;

Yamaguchi, M ;

Sawaki, N .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :82-86

[8] High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate [J].

Iso, Kenji ;

Yamada, Hisashi ;

Hirasawa, Hirohiko ;

Fellows, Natalie ;

Saito, Makoto ;

Fujito, Kenji ;

Denbaars, Steven P. ;

Speck, James S. ;

Nakamura, Shuji .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L960-L962

[9] Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes [J].

Kubota, Masashi ;

Okamoto, Kuniyoshi ;

Tanaka, Taketoshi ;

Ohta, Hiroaki .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[10] Luminescence from stacking faults in gallium nitride [J].

Liu, R ;

Bell, A ;

Ponce, FA ;

Chen, CQ ;

Yang, JW ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :021908-1

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