Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations

被引：18
作者：
Foisal, Abu Riduan Md [1 ]
Toan Dinh [1 ]
Tanner, Philip [1 ]
Hoang-Phuong Phan [1 ]
Tuan-Khoa Nguyen [1 ]
Streed, Erik W. [2 ]
Dzung Viet Dao [1 ]
机构：
[1] Griffith Univ, Queensland Micronanotechnol Ctr, Nathan, Qld 4111, Australia
[2] Griffith Univ, Ctr Quantum Dynam, Nathan, Qld 4111, Australia
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 08期
基金：
澳大利亚研究理事会;
关键词：
3C-SiC/Si heterojunction; rectification ratio; UV-visible illumination; responsivity; energy band diagram; SINGLE; MICRO/NANOWIRE; PHOTODETECTOR; PHOTODIODES; SENSITIVITY; DEPENDENCE; STRAIN;
D O I：
10.1109/LED.2018.2850757
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the photo-characteristics of an n-3C-Silicon carbide (SiC)/p-Si heterojunction under ultraviolet (UV) and visible illuminations. The 3C-SiC thin film has been grown on Si (100) substrate by a low pressure chemical vapor deposition technique at 1000 degrees C. The as-grown structure shows an excellent rectification ratio (IF/IR) of 1.8 x 10(6) at +/- 2 V and a reverse bias current of 5.5 x 10(-9) A at 2V in dark conditions. The heterojunction exhibits good sensitivity simultaneously to both UV (375 nm) and visible (637 nm) illuminations. The results indicate that the fabricated structure could be an excellent platform where detection of a wide spectral illumination is vital. The insight of electron-hole pairs generation and carrier transport mechanism at different illumination conditions is explained in detail via an anisotype heterojunction energy band diagram.
引用
收藏
页码：1219 / 1222
页数：4
相关论文
共 32 条
[1]   Ultraviolet single photon detection with Geiger-mode 4H-SiC avalanche photodiodes [J].
Bai, Xiaogang ;
Mcintosh, Dion ;
Liu, Handin ;
Campbell, Joe C. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (21-24) :1822-1824
[2]   SILICON-CARBIDE UV PHOTODIODES [J].
BROWN, DM ;
DOWNEY, ET ;
GHEZZO, M ;
KRETCHMER, JW ;
SAIA, RJ ;
LIU, YS ;
EDMOND, JA ;
GATI, G ;
PIMBLEY, JM ;
SCHNEIDER, WE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333
[3]   Intensity-dependent reflectance and transmittance of semiconductor periodic structures [J].
Brzozowski, L ;
Sukhovatkin, V ;
Sargent, ETH ;
SpringThorpe, ATJ ;
Extavour, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (07) :924-930
[4]   ELECTRICAL TRANSPORT-PROPERTIES OF CRYSTALLINE SILICON-CARBIDE SILICON HETEROJUNCTIONS [J].
CHAUDHRY, MI .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :670-672
[5]   Piezoresistive effect of p-type single crystalline 3C-SiC on (111) plane [J].
Dao, Dzung Viet ;
Phan, Hoang-Phuong ;
Qamar, Afzaal ;
Dinh, Toan .
RSC ADVANCES, 2016, 6 (26) :21302-21307
[6]   AN AMORPHOUS SIC/SI HETEROJUNCTION P-I-N-DIODE FOR LOW-NOISE AND HIGH-SENSITIVITY UV DETECTOR [J].
FANG, YK ;
HWANG, SB ;
CHEN, KH ;
LIU, CR ;
TSAI, MJ ;
KUO, LC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :292-296
[7]   Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure [J].
Foisal, Abu Riduan Md ;
Qamar, Afzaal ;
Hoang-Phuong Phan ;
Toan Dinh ;
Khoa-Nguyen Tuan ;
Tanner, Philip ;
Streed, Erik W. ;
Dzung Viet Dao .
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (46) :39921-39925
[8]   Spectral splitting module geometry that utilizes light trapping [J].
Goldschmidt, Jan Christoph ;
Do, Chau ;
Peters, Marius ;
Goetzberger, Adolf .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 108 :57-64
[9]   Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films [J].
Hoang-Phuong Phan ;
Dzung Viet Dao ;
Tanner, Philip ;
Han, Jisheng ;
Nam-Trung Nguyen ;
Dimitrijev, Sima ;
Walker, Glenn ;
Wang, Li ;
Zhu, Yong .
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (35) :7176-7179
[10]   Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film [J].
Hoang-Phuong Phan ;
Tanner, Philip ;
Dzung Viet Dao ;
Wang, Li ;
Nam-Trung Nguyen ;
Zhu, Yong ;
Dimitrijev, Sima .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) :399-401
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