A Reliability Study on Green InGaN-GaN Light-Emitting Diodes

被引：27
作者：
Li, Z. L. [1 ]
Lai, P. T. [1 ]
Choi, H. W. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 19期
关键词：
Light-emitting diode (LED); reliability; 1/F NOISE;
D O I：
10.1109/LPT.2009.2028155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, noise, 1/f and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime.
引用
收藏
页码：1429 / 1431
页数：3
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