Nanoscale defects and microwave properties of (BaSr)TiO3 ferroelectric thin films

被引：29

作者：

Jackson, T. J. ^{[1
]}

Jones, I. P. ^{[2
]}

机构：

[1] Univ Birmingham, Sch Elect Elect & Comp Sci, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Sch Met & Mat, Birmingham B15 2TT, W Midlands, England

来源：

JOURNAL OF MATERIALS SCIENCE | 2009年 / 44卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

STRONTIUM-TITANATE FILMS; DIELECTRIC-PROPERTIES; INTERNAL-STRESSES; EPITAXIAL-GROWTH; PHASE-DIAGRAMS; SRTIO3; MISFIT; MGO; DISLOCATIONS; RELAXATION;

D O I：

10.1007/s10853-009-3666-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film ferroelectrics may have important applications in microwave devices but in general have significantly worse properties than bulk material. This is principally because of secondary and point defects. The natures of the defects are reviewed and strategies to study and remove them outlined.

引用

页码：5288 / 5296

页数：9

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