Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

被引：5

作者：

Di, Z. F. ^{[1
]}

Wang, Y. Q. ^{[1
]}

Nastasi, M. ^{[1
]}

Bisognin, G. ^{[2
,3
,5
]}

Berti, M. ^{[2
,3
]}

Thompson, P. E. ^{[4
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Univ Padua, Dipartmento Fis, I-35131 Padua, Italy

[3] Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy

[4] USN, Res Lab, Washington, DC 20375 USA

[5] Unita Padova, CNISM, I-35131 Padua, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

关键词：

elemental semiconductors; Ge-Si alloys; high-temperature effects; nucleation; proton effects; semiconductor heterojunctions; silicon; vacancies (crystal); HYDROGEN; EXFOLIATION; DIFFUSION; MECHANISM; PRESSURE;

D O I：

10.1063/1.3167814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the mechanisms underlying strained layer relaxation by means of point defect interaction. During high temperature (300 degrees C) proton irradiation, vacancies generated in the vicinity of SiGe layer migrate and accumulate within the compressively strained SiGe layer. The accumulating vacancies are stabilized by hydrogen, which diffuses from the implanted region, thus allowing the nucleation and growth of hydrogen-vacancy (V-H) complexes. The formation of V-H complexes is accompanied by gradual strain relief in SiGe layer. Since the diffusion of both vacancies and hydrogen is limited by the irradiation temperature, strain relaxation of the SiGe layer is not realized during room temperature (20 degrees C) proton irradiation. The study supports the idea that the compressive stress in the SiGe layer induces the indiffusion of vacancies and H, and reveals the important role of point defects in the strain relaxation of the strained SiGe layer.

引用

页数：3

共 24 条

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