Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films

被引：30

作者：

Shan, C. X. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Yao, B. ^{[1
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

Choy, K. L. ^{[2
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Univ Nottingham, Sch Mech Mat & Mfg Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

atomic layer deposition; gold; II-VI semiconductors; metal-insulator boundaries; MIM structures; photodetectors; semiconductor thin films; sunlight; ultraviolet detectors; ultraviolet radiation effects; wide band gap semiconductors; zinc compounds; THIN-FILMS; DETECTOR; SURFACE; SAPPHIRE; METAL;

D O I：

10.1116/1.3098502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique, and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth, the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore, the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector.

引用

页码：1765 / 1768

页数：4

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