Upgrading the "Berg-model" for reactive sputtering processes

被引:72
作者
Berg, S. [1 ]
Sarhammar, E. [1 ]
Nyberg, T. [1 ]
机构
[1] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden
关键词
Reactive sputtering; Hysteresis; Modelling; BEHAVIOR;
D O I
10.1016/j.tsf.2014.02.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Several phenomena are neglected in the original "Berg model" in order to provide a simple model of the reactive sputtering process. There exist situations, however, where this simplified treatment limits the usefulness of the model. To partly correct for this, we introduce an upgraded version of the basic model. We abandon the simplifying assumption that compound targets are sputter eroded as molecules. Instead, the molecule is split and individual atoms will be sputter ejected. Also, the effect of ionized reactive gas atoms implanted into the target will be considered. We outline how to modify the original model to include these effects. Still, the mathematical treatment is maintained simple so that the new model may serve as an easy-to-understand tutorial of the complex mechanisms of reactive sputtering. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:186 / 192
页数:7
相关论文
共 13 条
[1]   Fundamental understanding and modeling of reactive sputtering processes [J].
Berg, S ;
Nyberg, T .
THIN SOLID FILMS, 2005, 476 (02) :215-230
[2]   PREDICTING THIN-FILM STOICHIOMETRY IN REACTIVE SPUTTERING [J].
BERG, S ;
LARSSON, T ;
NENDER, C ;
BLOM, HO .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :887-891
[3]   Target surface condition during reactive glow discharge sputtering of copper [J].
Depla, D ;
Haemers, J ;
De Gryse, R .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2002, 11 (01) :91-96
[4]   Target voltage behaviour during DC sputtering of silicon in an argon/nitrogen mixture [J].
Depla, D ;
Colpaert, A ;
Eufinger, K ;
Segers, A ;
Haemers, J ;
De Gryse, R .
VACUUM, 2002, 66 (01) :9-17
[5]   HYSTERESIS EFFECT IN REACTIVE SPUTTERING - A PROBLEM OF SYSTEM STABILITY [J].
KADLEC, S ;
MUSIL, J ;
VYSKOCIL, H .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (09) :L187-L190
[6]   Dynamic behaviour of the reactive sputtering process [J].
Kubart, T. ;
Kappertz, O. ;
Nyberg, T. ;
Berg, S. .
THIN SOLID FILMS, 2006, 515 (02) :421-424
[7]   TRIDYN - A TRIM SIMULATION CODE INCLUDING DYNAMIC COMPOSITION CHANGES [J].
MOLLER, W ;
ECKSTEIN, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :814-818
[8]   Eliminating the hysteresis effect for reactive sputtering processes [J].
Nyberg, T ;
Berg, S ;
Helmersson, U ;
Hartig, K .
APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3
[9]   TRIDYN simulation of target poisoning in reactive sputtering [J].
Rosén, D ;
Katardjlev, I ;
Berg, S ;
Möller, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 228 :193-197
[10]   A study of the process pressure influence in reactive sputtering aiming at hysteresis elimination [J].
Sarhammar, E. ;
Strijckmans, K. ;
Nyberg, T. ;
Van Steenberge, S. ;
Berg, S. ;
Depla, D. .
SURFACE & COATINGS TECHNOLOGY, 2013, 232 :357-361