Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching

被引：5

作者：

Chen, Jun ^{[1
]}

Sekiguchi, Takashi ^{[1
]}

Li, Jianyong ^{[2
]}

Ito, Shun ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Fukushima Renewable Energy Inst, Koriyama, Fukushima 9630215, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 99卷

基金：

日本学术振兴会;

关键词：

SrTiO3; Resistive switching; Dislocation; MEMORY; RESISTANCE; TRANSITION; OXIDES;

D O I：

10.1016/j.spmi.2016.03.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nb-doped SrTiO3 showed interesting resistive switching phenomena, which could be modulated by either thermal treatment or doping level. The impacts of oxygen vacancies and dislocations on resistive switching were investigated by comparing the switching behaviors of as-prepared and air-annealed crystals with a variety of doping levels. It was found that both oxygen vacancies and dislocations may have effects on the switching depending on the doping level. It was dominated by oxygen vacancies for low doping and dislocations for high doping. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：182 / 185

页数：4

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