Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

被引：104

作者：

Uren, Michael J. ^{[1
]}

Silvestri, Marco ^{[1
]}

Caesar, Markus ^{[1
]}

Hurkx, Godefridus Adrianus Maria ^{[2
]}

Croon, Jeroen A. ^{[3
]}

Sonsky, Jan ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England

[2] NXP Semicond Res, B-3001 Louvain, Belgium

[3] NXP Semicond Res, NL-5656 AA Eindhoven, Netherlands

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期

关键词：

Dynamic ON-resistance; current collapse; HEMT; carbon doping; defects; GAN;

D O I：

10.1109/LED.2013.2297626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dynamic ON-resistance (R-ON) in heavily carbon-doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2-DEG. Contrary to normal expectations, suppression of dynamic R-ON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2-DEG.

引用

页码：327 / 329

页数：3

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