Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties

被引：5

作者：

Krysova, Hana ^{[1
]}

Neumann-Spallart, Michael ^{[2
]}

Tarabkova, Hana ^{[1
]}

Janda, Pavel ^{[1
]}

Kavan, Ladislav ^{[1
]}

Krysa, Josef ^{[2
]}

机构：

[1] Czech Acad Sci, J Heyrovsky Inst Phys Chem, Dolejskova 2155-3, Prague 18223 8, Czech Republic

[2] Univ Chem & Technol Prague, Dept Inorgan Technol, Tech 5, Prague 16628 6, Czech Republic

来源：

BEILSTEIN JOURNAL OF NANOTECHNOLOGY | 2021年 / 12卷

关键词：

Al2O3; atomic layer deposition (ALD); barrier properties; corrosion; electrochemistry; FTO; THIN-FILMS; TIO2; ZNO; TRANSPARENT; PHOTOANODES; PROTECTION; TITANIA;

D O I：

10.3762/bjnano.12.2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2 /glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (approximate to 100 nm/h). The dissolution was slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.

引用

页码：24 / 34

页数：11

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