EBIC study of extended defects in InGaAs/InGaAs strain-balanced MQWs for thermophotovoltaic applications

被引：0
|
作者：
Tundo, S
Mazzer, M
Nasi, L
Salviati, G
Lazzarini, L
Torsello, G
Rohr, C
Connolly, J
Abbott, P
Barnham, KWJ
机构：
[1] Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
[2] CNR, IMM Inst, Sez Lecce, I-73100 Lecce, Italy
[3] CNR, IMEM Inst, I-43010 Fontanini Parma, Italy
[4] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Quantum Photovolta Grp, London SW7 2BZ, England
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 | 2003年 / 180期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The anomalous current-voltage characteristics of strain-balanced multi-quantum well solar cells grown on InP, were correlated with the electrical properties of extended defects generated by the local breakdown of the highly strained sequence of InGaAs layers. The analysis of electron beam induced current images reveals that the charge collection efficiency is enhanced at the boundaries of the extended defects when carriers are generated in the depletion region. The bright EBIC contrast is found to be due to the local partial compensation of a notch in the valence band at the heterointerface between the p and the i regions.
引用
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页码：581 / 584
页数：4
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