Growth of subnanometer-thin Si overlayer on TiO2(110)-(1x2) surface

被引：14

作者：

Abad, J ^{[1
]}

Rogero, C ^{[1
]}

Méndez, J ^{[1
]}

López, MF ^{[1
]}

Martin-Gago, JA ^{[1
]}

Román, E ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat, Madrid 6, Spain

来源：

APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期

关键词：

titanium oxide; rutile; silicon; silicon oxide; X-ray photoelectron spectroscopy (XPS); ultraviolet photoelectron spectroscopy (UPS); low energy electron diffraction (LEED); scanning tunneling microscopy (STM); surface oxidation;

D O I：

10.1016/j.apsusc.2004.05.082

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of subnanometer silicon overlayers on TiO2 (1 1 0)-(1 x 2) reconstructed surfaces at room temperature (RT) has been studied by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). For Si coverage of 1 monolayer (ML) only Si2+ species were detected on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1 x 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Therefore, the combination of all the above mentioned techniques, indicates that the Si overlayer consists of a smooth and homogeneous Si oxide layer on a reduced TiO2 surface. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：497 / 502

页数：6

共 25 条

[1] Dissociative adsorption of NO on TiO2(110) argon ion bombarded surfaces [J].