Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

被引：2

作者：

Kim, Jin-Seong ^{[1
]}

Han, Jae-Min ^{[1
]}

Joung, Mi-Ri ^{[1
]}

Kweon, Sang-Hyo ^{[1
]}

Kang, Chong-Yun ^{[2
,3
]}

Nahm, Sahn ^{[1
,2
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] KU KIST Grad Sch Converging Sci & Technol, Seoul 136713, South Korea

[3] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea

来源：

CERAMICS INTERNATIONAL | 2014年 / 40卷 / 09期

关键词：

Dielectric; Thin film; Embedded capacitor; DECOUPLING CAPACITORS; EMBEDDED CAPACITORS; MIM CAPACITORS; TEMPERATURE; RESISTORS; BEHAVIOR; LEAKAGE;

D O I：

10.1016/j.ceramint.2014.06.093

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crystalline (Zr,Ti)(0.85)(Ca,Sr)(0.15)O-1.85 (ZTCS) films were grown on a Pt/Ti/SiO2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 degrees C was approximately 30.5 with a low tan delta value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm(2) with a small TCC of -60.7 ppm/degrees C at 100 kHz. A low leakage current (1.4 x 10(-8) A/cm(2) at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures ( <= 300 degrees C) are good candidates for use as embedded capacitor in printed circuit boards. (c) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：14957 / 14964

页数：8

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