Al+ implanted 4H-SiC p+-i-n diodes: Evidence for post-implantation-annealing dependent defect activation

被引：4

作者：

Grossner, U. ^{[1
]}

Moscatelli, F. ^{[1
]}

Nipoti, R. ^{[1
]}

机构：

[1] ABB Corp Res, Segelhofstr 1K, CH-5405 Baden, Switzerland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

implantation; PiN; annealing; IV; defect;

D O I：

10.4028/www.scientific.net/MSF.778-780.657

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two families of Al+ implanted vertical p(+)-i-n diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z(1/2) defect for the one case and another one with an activation energy of 0.25eV.

引用

页码：657 / +

页数：2

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