Research of the fatigue model of PZT ferroelectric thin films

被引：0
|
作者：
Chen, Fugui [1 ]
Yang, Chengtao [1 ]
Zhang, Shuren [1 ]
Liu, Jinsong [1 ]
Tian, Zhaoming [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2006年 / 78卷
关键词：
ferroelectric; PZT; fatigue model;
D O I：
10.1080/10584580600656825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There is a high electric field exists at the interface layer between electrode and ferroelectric film, electrons can be injected into the ferroelectric film through the interface layer from the electrode. Besides, oxygen vacancies re-arrangement can cause the ferroelectric fatigue during the process of the electron injection. Considering the two factors above, we proposed the ferroelectric fatigue model, and the simulation result matched the experimental result perfectly.
引用
收藏
页码：3 / 8
页数：6
相关论文
共 50 条
  • [21] Barrier photovoltaic effects in PZT ferroelectric thin films
    Yarmarkin, VK
    Gol'tsman, BM
    Kazanin, MM
    Lemanov, VV
    PHYSICS OF THE SOLID STATE, 2000, 42 (03) : 522 - 527
  • [22] Preparation and properties of the ferroelectric thin PZT films.
    Czekaj, D
    Surowiak, Z
    Dudkevich, VP
    Bakirov, AA
    METAL/NONMETAL MICROSYSTEMS: PHYSICS, TECHNOLOGY, AND APPLICATIONS, 1996, 2780 : 230 - 234
  • [23] Polarization fatigue in ferroelectric thin films
    Wang, Y
    Wong, KH
    Wu, WB
    CHINESE PHYSICS LETTERS, 2002, 19 (04) : 566 - 568
  • [24] Fatigue problems in ferroelectric thin films
    Wang, Y
    Wong, KH
    Choy, CL
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 191 (02): : 482 - 488
  • [25] Fatigue problems in ferroelectric thin films
    Wang, Y.
    Wong, K.H.
    Choy, C.L.
    Physica Status Solidi (A) Applied Research, 2002, 191 (02): : 482 - 488
  • [26] Ferroelectric and fatigue studies on PZT films produced by oxide precursors
    Araújo, EB
    Eiras, JA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 175 (02): : 735 - 741
  • [27] A mathematical model for the fatigue behavior of ferroelectric thin films for memory applications
    Chu, F
    INTEGRATED FERROELECTRICS, 2003, 58 : 1381 - 1393
  • [28] Seeding effect on the fatigue behaviour of PZT thin films
    Wu, AY
    Vilarinho, PM
    Kholkin, AL
    Salvado, IMM
    Baptista, JL
    INTEGRATED FERROELECTRICS, 2001, 37 (1-4) : 475 - 484
  • [29] Recent progress in sputtering PZT thin films for ferroelectric memories
    Sakoda, T
    Aoki, K
    Hashimoto, S
    Fukuda, Y
    INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 385 - 396
  • [30] Ferroelectric and electric properties of the PZT/ZNO hybrid thin films
    Lee, SH
    Ryu, MK
    Yoon, MH
    Kim, JP
    Ro, JH
    Kim, HK
    Jang, MS
    FERROELECTRICS, 2002, 268 : 11 - 16
12345