Research of the fatigue model of PZT ferroelectric thin films

被引:0
|
作者
Chen, Fugui [1 ]
Yang, Chengtao [1 ]
Zhang, Shuren [1 ]
Liu, Jinsong [1 ]
Tian, Zhaoming [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
关键词
ferroelectric; PZT; fatigue model;
D O I
10.1080/10584580600656825
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There is a high electric field exists at the interface layer between electrode and ferroelectric film, electrons can be injected into the ferroelectric film through the interface layer from the electrode. Besides, oxygen vacancies re-arrangement can cause the ferroelectric fatigue during the process of the electron injection. Considering the two factors above, we proposed the ferroelectric fatigue model, and the simulation result matched the experimental result perfectly.
引用
收藏
页码:3 / 8
页数:6
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