Investigation of the Electrical Properties of PLD-Grown Bi2Te3 and Sb2Te3

被引：0

作者：

Shaik, Muneer ^{[1
]}

Motaleb, Ibrahim Abdel ^{[1
]}

机构：

[1] Northern Illinois Univ, Dept Elect Engn, De Kalb, IL 60115 USA

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013) | 2013年

关键词：

Bi2Te3; Sb2Te3; PLD; Sheet resistance; Impedance Spectroscopy; Nyquist plot; THERMOELECTRIC PROPERTIES; THIN-FILMS; DEPOSITION;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) were deposited using pulsed laser deposition (PLD) in the presence of Argon gas. The substrate temperature (T) was varied from 25 degrees C to 450 degrees C. Impedance spectroscopy and four point probe techniques were used to characterize the electrical properties of the films Nyquist plots were obtained from these measurements for all the films, and an equivalent circuit model was developed to fit the experimental data. It was found that the values of series resistance obtained from the impedance spectroscopy are consistent with the values of the sheet resistance obtained from the four point probe instrument. The extracted values of the circuit elements explain the role of the grain boundary in determining the film impedance.

引用

页数：6