Spectroscopic characterization of nitrogen- and boron-doped graphene layers

被引：3
|
作者：
Kamoi, Susumu [1 ]
Kim, Jung Gon [1 ]
Hasuike, Noriyuki [1 ]
Kisoda, Kenji [2 ]
Harima, Hiroshi [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan
[2] Wakayama Univ, Dept Phys, Wakayama 6408510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 11期
关键词：
RAMAN-SCATTERING; CHARGE-TRANSFER; LARGE-AREA; DOPANTS; GROWTH; FILMS;
D O I：
10.7567/JJAP.54.115101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers. (C) 2015 The Japan Society of Applied Physics
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页数：5
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