Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers

The impact of carrier density non-pinning above threshold on laser performance is studied in different quantum dot/dash lasers with room temperature emission wavelengths of 0.98-1.52 mu m. Owing to inhomogeneity in the active region, the non-pinning may be important even above room temperature because of the non-thermal carrier distribution between the dots. This has a large impact on the external differential efficiency and the output power of the devices. In the presence of non-radiative recombination, non-pinning will further decrease the output power and the slope efficiency because of a significant reduction in the number of carriers available for stimulated emission.