Enhancing the Expected Lifetime of NAND Flash by Short q-Ary WOM Codes

被引：0

作者：

Fan, Bing ^{[1
]}

Qin, Minghai ^{[1
]}

Siegel, Paul H. ^{[2
,3
]}

机构：

[1] Western Digital Corp, San Jose, CA 95035 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

[3] Univ Calif San Diego, Ctr Memory & Recording Res, San Diego, CA 92093 USA

来源：

IEEE COMMUNICATIONS LETTERS | 2018年 / 22卷 / 07期

基金：

美国国家科学基金会;

关键词：

NAND Flash; WOM Codes;

D O I：

10.1109/LCOMM.2017.2776200

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Write-once memory (WOM) codes can be used to enhance the lifetime of multi-level flash memories by constraining unidirectional changes of cell levels. A q-ary WOM code on integer lattices can be defined by a message decoding function and an updating function. Instead of focusing on the worst-case performance, i.e., the guaranteed number of writes of WOM codes, we study the average number of writes that can be successfully performed, assuming that the input alphabet is the same on each write. We model the updating of messages in a WOM as a Markov process on lattices, and present techniques to evaluate the average number of writes. Several code constructions are compared. A greedy algorithm is presented to obtain the optimal updating function of a given decoding function.

引用

页码：1302 / 1305

页数：4