Photoluminescence of focused ion beam implanted Er3+: Y2SiO5 crystals

被引：10

作者：

Kukharchyk, Nadezhda ^{[1
]}

Pal, Shovon ^{[1
]}

Roediger, Jasper ^{[2
]}

Ludwig, Arne ^{[1
]}

Probst, Sebastian ^{[3
]}

Ustinov, Alexey V. ^{[3
]}

Bushev, Pavel ^{[4
]}

Wieck, Andreas D. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, RUBION, D-44780 Bochum, Germany

[3] Karlsruhe Inst Technol, Phys Inst, D-76128 Karlsruhe, Germany

[4] Univ Saarland, D-66123 Saarbrucken, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 10期

关键词：

rare earths; doping; annealing; photoluminescence; Y2SiO5; ion implantation;

D O I：

10.1002/pssr.201409304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Erbium-doped low symmetry Y2SiO5 crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er3+-ions by the focused ion beam technique at yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er3+:Y2SiO5 crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of ion activation after the post-implantation annealing on the fluence value. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

引用

页码：880 / 884

页数：5

共 15 条

[1] Effects of magnetic field orientation on optical decoherence in Er3+:Y2SiO5 [J].