Gate tunable optical absorption and band structure of twisted bilayer graphene

被引:47
作者
Yu, Kwangnam [1 ]
Nguyen Van Luan [2 ]
Kim, Taesoo [2 ]
Jeon, Jiwon [1 ]
Kim, Jiho [1 ]
Moon, Pilkyung [3 ,4 ,5 ,6 ]
Lee, Young Hee [2 ]
Choi, E. J. [1 ]
机构
[1] Univ Seoul, Dept Phys, Seoul 130743, South Korea
[2] Sungkyunkwan Univ, Ctr Integrated Nanostruct Phys, IBS, Suwon 16419, South Korea
[3] New York Univ Shanghai, Shanghai, Peoples R China
[4] NYU Shanghai, NYU ECNU Inst Phys, Shanghai, Peoples R China
[5] NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
[6] East China Normal Univ, State Key Lab Precis Spect, Shanghai, Peoples R China
基金
新加坡国家研究基金会;
关键词
MASSLESS DIRAC FERMIONS; SUPERCONDUCTIVITY;
D O I
10.1103/PhysRevB.99.241405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests dramatic changes such as the splitting of the interlinear-band absorption step, the shift of the inter-van Hove singularity transition peak, and the emergence of a very strong intravalence (intraconduction) band transition. These anomalous optical behaviors demonstrate consistently a nonrigid band structure modification created by ion-gel gating through layer-dependent Coulomb screening. We propose that this screening-driven band modification is a universal phenomenon that persists to other bilayer crystals in general, establishing electrical gating as a versatile technique to engineer band structures and to create different types of optical absorptions that can be exploited in electro-optical device applications.
引用
收藏
页数:6
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