Machining, Characterization and Optimization: A Novel Approach for Machining Channels on Silicon Wafer Using Tailor-Made Micro Abrasive Jet Machining

被引:7
作者
Tomy, Anu [1 ]
Hiremath, Somashekhar S. [1 ]
机构
[1] Indian Inst Technol Madras, Dept Mech Engn, Chennai 600036, Tamil Nadu, India
关键词
Abrasive jet machining; Silicon wafer; X-ray diffraction; Feed rate; Surface roughness; ANOVA; GREY RELATIONAL ANALYSIS; LASER; PERFORMANCE; GLASS;
D O I
10.1007/s12633-021-01036-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Literature reveals that machining a silicon wafer is very arduous due to its high brittle nature and low fracture toughness. Researchers have attempted to machine features on a silicon wafer using both conventional and non-conventional processes and both have their merits & demerits. Abrasive jet machining (AJM) is one of the efficient non-conventional machining methods for machining hard and brittle materials. Removal of material occurs by impact erosion and is free from Heat Affected Zone (HAZ) and resolidification. These advantages make AJM a potential process for machining silicon wafers. Therefore an attempt has been made to machine channels on silicon wafers using a Tailor-made AJM setup. The process parameters selected for machining channels on a silicon wafer are air pressure, Feed rate (FR), and Standoff distance (SOD). The output responses considered for characterization are material removal rate (MRR), channel characteristics like width, depth, and Surface Roughness (R-a). The machined Channels are found to have sufficient depth and good surface finish and are free from heat affected zone and resolidification. X-Ray Diffraction (XRD) analysis has indicated the presence of embedded SiC particles in the channel. GRA method is utilized to achieve an optimal condition of higher depth and MRR, smaller width, and Ra. Also, the significance and percentage contribution of process parameters are found out through ANOVA and obtained results are presented in the paper.
引用
收藏
页码:2317 / 2328
页数:12
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