Investigation of Base High Doping Impact on the npn Solar Cell Microstructure Performance Using Physically Based Analytical Model

被引:15
作者
Basyoni, Marwa S. S. [1 ,2 ]
Zekry, A. [3 ]
Shaker, Ahmed [4 ]
机构
[1] Univ Hail, Dept Comp Engn, Comp Sci & Engn Coll, Hail 81451, Saudi Arabia
[2] Modern Sci & Arts Univ MSA, Dept Elect Commun & Elect Syst Engn, Fac Engn, Cairo 12451, Egypt
[3] Ain Shams Univ, Dept Elect & Commun, Fac Engn, Cairo 11517, Egypt
[4] Ain Shams Univ, Dept Engn Phys & Math, Fac Engn, Cairo 11517, Egypt
关键词
Analytical modeling; high doping; high efficiency; low cost; P+ base doping;
D O I
10.1109/ACCESS.2021.3053625
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Recently, there is a rapid trend to incorporate low cost solar cells in photovoltaic technology. In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping effects encountered in these wafers render their practical use in fabrication. The npn solar cell microstructure has been found to avoid this issue by the proper design of vertical generation and lateral collection of the light generated carriers. We report on the impact of the p(+) base doping concentration, up to 2x10(19)cm(-3), on the npn microstructure performance to find the most appropriate way for high efficiency. To optimize the structure, a series of design steps has been applied using our previously published analytical model. Before inspecting the high doped base effect, firstly, the n(+) emitter is optimized. Secondly, the impact of bulk recombination inside the p(+) base is introduced showing the range of optimum base width (W-p). Then, we investigate thoroughly the impact of base doping levels for different base widths to get the optimum W-p that satisfies maximum efficiency. The results show that for p(+) base doping concentration ranging from 5x10(17) cm(-3) to 2x10(-19)cm(-3), the npn microstructure efficiency decreases from 15.9% to 9%, respectively. Although the efficiency is degraded considerably for higher doping levels, the structure still achieves a competitive efficiency at higher doping levels, for which its cost is greatly reduced, in comparison with thin film solar cells. Moreover, using higher doping permits lesser wafer area which could be beneficial for large area solar cells design.
引用
收藏
页码:16958 / 16966
页数:9
相关论文
共 41 条
  • [1] Novel design of plasmonic and dielectric antireflection coatings to enhance the efficiency of perovskite solar cells
    Abdelraouf, Omar A. M.
    Shaker, Ahmed
    Allam, Nageh K.
    [J]. SOLAR ENERGY, 2018, 174 : 803 - 814
  • [2] Analytical modeling of the radial pn junction nanowire solar cells
    Ali, Nouran M.
    Allam, Nageh K.
    Haleem, Ashraf M. Abdel
    Rafat, Nadia H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (02)
  • [3] [Anonymous], 2016, ATH ATL US MAN PROC
  • [4] An analytical approach for modeling of high-efficiency crystalline silicon solar cells with homo-hetero junctions
    Bashiri, Hadi
    Karami, Mohammad Azim
    Nejad, Shahram Mohammad
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 111
  • [5] MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS
    DELALAMO, JA
    SWANSON, RM
    [J]. SOLID-STATE ELECTRONICS, 1987, 30 (11) : 1127 - 1136
  • [6] High efficiency screen-printed planar solar cells on single crystalline silicon materials
    Ebong, A
    Hilali, M
    Upadhyaya, V
    Rounsaville, B
    Ebong, I
    Rohatgi, A
    [J]. Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, : 1173 - 1176
  • [7] Silicon nanowire radial p-n junction solar cells
    Garnett, Erik C.
    Yang, Peidong
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (29) : 9224 - +
  • [8] Analysis and optimization of the bulk and rear recombination of screen-printed PERC solar cells
    Gatz, S.
    Mueller, J.
    Dullweber, T.
    Brendel, R.
    [J]. PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012), 2012, 27 : 95 - 102
  • [9] Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells
    Gatz, S.
    Bothe, K.
    Mueller, J.
    Dullweber, T.
    Brendel, R.
    [J]. PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 : 318 - 323
  • [10] Geerligs LJ, 2012, 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), P1701, DOI 10.1109/PVSC.2012.6317923