Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

被引：21

作者：

Duncan, Dan ^{[1
]}

Magyari-Kope, Blanka ^{[1
]}

Nishi, Yoshio ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW APPLIED | 2017年 / 7卷 / 03期

关键词：

OXYGEN VACANCY; RELIABILITY; DIFFUSION; STABILITY; RRAM;

D O I：

10.1103/PhysRevApplied.7.034020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Doping is an increasingly popular technique for improving the characteristics of cutting-edge HfOx nonvolatile memory devices, but relatively few dopant species have been investigated. In this work, the properties of 50 different cation and anion dopants in HfOx are explored using density-functional theory and are corroborated with experimental data. Depending on the atomic species, dopants are found to preferentially form on either substitutional or interstitial lattice sites and to reduce the formation energy of oxygen vacancies in the surrounding oxide. The behavior of cation dopants in HfOx is also found to be well predicted by six properties: dopant valence, atomic radius, native-oxide enthalpy of formation, coordination number, magnetization, and charge transfer with the HfOx lattice. These results can be used to optimize dopant selection for tuning of the switching characteristics of HfOx-based resistance-change random-access-memory and conductive-bridge random-access-memory devices.

引用

页数：10

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