Demonstration of blue-ultraviolet avalanche photo-diodes of II-VI wide bandgap compounds grown by MBE

被引：7

作者：

Abe, T ^{[1
]}

Ishikura, H ^{[1
]}

Fukuda, N ^{[1
]}

Aung, ZM ^{[1
]}

Adachi, M ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Elect & Elect Dept, Fac Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnSe; photo-diode; blue-ultraviolet photodetector; APD operation; MBE;

D O I：

10.1016/S0022-0248(00)00289-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper presents the first demonstration of blue-ultraviolet avalanche photo-diode (APD) operation using II-VI wide bandgap semiconductor ZnSe, grown on GaAs substrate by molecular-beam epitaxy. With improving crystal quality on macroscopic defects as well as an effective mesa-etching technology, the p(+)-n structure ZnSe diode has shown a distinct APD operation with a large avalanche gain of G = 50 under high reverse bias of 27 V at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1134 / 1137

页数：4

共 7 条

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