Study of the long-term behavior of the sensitivity of amorphous silicon photo detectors under illumination

被引:5
作者
Eglseer, Ludwig [1 ]
Horvat, Sandra [1 ]
Kroha, Hubert [1 ]
机构
[1] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany
关键词
silicon strip sensors; hydrogenated amorphous silicon; laser diodes; photo detectors; Staebler-Wronski effect; long-term illumination;
D O I
10.1016/j.nima.2006.05.198
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The deterioration of the sensitivity of amorphous silicon strip photo detectors ('ALMY' sensors) under long-term illumination has been studied with collimated laser beams of different wavelengths and intensities. The high position sensitivity of the ALMY sensors allows for the precise localization of the illumination point and for monitoring of the local sensitivity degradation with respect to the rest of the non-illuminated sensor area. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:18 / 21
页数:4
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