A novel self-aligned process for platinum silicide nanowires

被引：13

作者：

Zhang, Zhen

Hellstrom, Per-Erik

Lu, Jun

Ostling, Mikael

Zhang, Shi-Li

机构：

[1] Royal Inst Technol, KTH, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

[2] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 11-12期

关键词：

sidewall transfer lithography; self-aligned process; nanowire; platinum silicide;

D O I：

10.1016/j.mee.2006.09.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSix) process consists of two sequential steps in a single run: a silicidation step in N-2 to ensure a controllable silicide formation followed by an oxidation step in O-2 to form a reliable protective SiOx layer on top of the grown PtSix. The achieved nanowires are characterised by a low resistivity: 26 +/- 3 and 34 +/- 2 mu Omega cm for the Pt2Si- and PtSi-dominated nanowires. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2107 / 2111

页数：5

共 16 条

[1] FORMATION OF PT SILICIDES - THE EFFECT OF OXYGEN [J].