Estimations of the Fermi Velocity and Effective Mass in Epitaxial Graphene and Carbyne

被引：4

作者：

Davydov, S. Yu ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 07期

关键词：

dispersion relation; density of states; metal and semiconductor substrates; DENSITY-OF-STATES;

D O I：

10.1134/S1063785019070058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the Fermi velocity of electrons is a natural characteristic of gapless graphene and cumulene modification of carbyne weakly coupled with the substrate. At the same time, in the presence of gap (graphene with a gap and polyyne modification of carbyne), the corresponding characteristic is the effective electron mass. The corresponding analytical estimations have been performed.

引用

页码：650 / 652

页数：3

共 18 条

[1] On renormalization of the Fermi velocity in epitaxial graphene [J].

Alisultanov, Z. Z. .

TECHNICAL PHYSICS LETTERS, 2013, 39 (07) :597-600

[2] Chains of carbon atoms: A vision or a new nanomaterial? [J].

Banhart, Florian .

BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2015, 6 :559-569

[3] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[4] On the electron affinity of silicon carbide polytypes [J].

Davydov, S. Yu. .

SEMICONDUCTORS, 2007, 41 (06) :696-698

[5] The role of electron-electron repulsion in the problem of epitaxial graphene on a metal: Simple estimates [J].

Davydov, S. Yu. .

PHYSICS OF THE SOLID STATE, 2017, 59 (08) :1674-1682

[6] On the fermi velocity and static conductivity of epitaxial graphene [J].

Davydov, S. Yu .

PHYSICS OF THE SOLID STATE, 2014, 56 (04) :849-853

[7] Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling [J].

Davydov, S. Yu. .

SEMICONDUCTORS, 2014, 48 (01) :46-52

[8]

Davydov S. Yu, 2014, ELEMENTARY INTRO THE

[9]

Davydov S. Yu., 2019, SEMICONDUCTORS, P53

[10]

Elias DC, 2011, NAT PHYS, V7, P701, DOI [10.1038/NPHYS2049, 10.1038/nphys2049]

← 1 2 →