Enhanced Humidity Sensing Response of SnO2/Silicon Nanopillar Array by UV Irradiation

被引:2
作者
Li, Wei [1 ,2 ,3 ]
Wang, Linlin [1 ,2 ]
Cai, Yun [1 ,2 ]
Pan, Peifeng [1 ,2 ]
Li, Jinze [1 ,2 ]
Ren, Qingying [1 ,2 ]
Xu, Jie [1 ,2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
humidity sensing; SnO2; film; silicon nanopillar array; UV light; GAS SENSOR; SNO2; NANOCOMPOSITES; NANOWIRES; SURFACE; NO2;
D O I
10.3390/s19092141
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this work, a silicon nanopillar array was created with nanosphere lithography. SnO2 film was deposited on this nanostructure by magnetron sputtering to form an SnO2/silicon nanopillar array sensor. The humidity sensitivity, response time, and recovery time were all measured at room temperature (25 degrees C) with UV or without UV irradiation. As a result, the humidity sensitivity properties were improved by enlarging the specific surface area with ordered nanopillars and irradiating with UV light. These results indicate that nanostructure sensors have potential applications in the field of sensors.
引用
收藏
页数:9
相关论文
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