Electron-Doping-Enhanced Trion Formation in Mono layer Molybdenum Disulfide Functionalized with Cesium Carbonate

被引：235

作者：

Lin, Jia Dan ^{[1
,2
]}

Han, Cheng ^{[1
,2
]}

Wang, Fei ^{[1
,3
]}

Wang, Rui ^{[2
]}

Xiang, Du ^{[2
]}

Qin, Shiqiao ^{[1
]}

Zhang, Xue-Ao ^{[1
]}

Wang, Li ^{[4
,5
]}

Zhang, Hua ^{[6
]}

Wee, Andrew Thye Shen ^{[2
,8
]}

Chen, Wei ^{[2
,7
,8
]}

机构：

[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Cent South Univ, Coll Phys & Elect, Changsha 410073, Hunan, Peoples R China

[4] Nanchang Univ, Inst Adv Study, Nanchang, Peoples R China

[5] Nanchang Univ, Dept Phys, Nanchang, Peoples R China

[6] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[7] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[8] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

来源：

ACS NANO | 2014年 / 8卷 / 05期

关键词：

MoS2; FET; n-type doping; Cs2CO3; photoluminescence; Raman; photocurrent; MONOLAYER MOS2; PHOTOLUMINESCENCE; NANOSTRUCTURES; TRANSISTORS; EMISSION; GROWTH;

D O I：

10.1021/nn501580c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.

引用

页码：5323 / 5329

页数：7

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