Free and forced Barkhausen noises in magnetic thin film based cross-junctions

被引：14
作者：
Elzwawy, Amir [1 ,2 ]
Talantsev, Artem [1 ,3 ,4 ]
Kim, CheolGi [1 ]
机构：
[1] DGIST, Dept Emerging Mat Sci, Daegu 42988, South Korea
[2] Natl Res Ctr, Ceram Dept, 12622 El Bohouth Str, Cairo, Egypt
[3] Inst Problems Chem Phys, Moscow 142432, Russia
[4] Tambov State Tech Univ, Tambov 392000, Russia
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2018年 / 458卷
关键词：
Magnetic thin films; Magnetization switching; Anisotropic magnetoresistance; Planar Hall effect; Barkhausen noise; METAL SPACER; ANISOTROPY; SENSORS; FIELD; NIFE; CU;
D O I：
10.1016/j.jmmm.2018.03.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Barkhausen noise, driven by thermal fluctuations in stationary magnetic field, and Barkhausen jumps, driven by sweeping magnetic field, are demonstrated to be effects of different orders of magnitude. The critical magnetic field for domain walls depinning, followed by avalanched and irreversible magnetization jumps, is determined. Magnetoresistive response of NiFe/M/NiFe (M = Au, Ta, Ag) trilayers to stationary and sweeping magnetic field is studied by means of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements. Thermal fluctuations result in local and reversible changes of magnetization of the layers in thin film magnetic junctions, while the sweeping magnetic field results in reversible and irreversible avalanched domain motion, dependently on the ratio between the values of sweeping magnetic field and domain wall depinning field. The correlation between AMR and PHE responses to Barkhausen jumps is studied. The value of this correlation is found to be dependent on the a angle between the directions of magnetic field and current path. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：292 / 300
页数：9
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